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mosfet metaloxidesemiconductorfieldeffecttransistor coolmos?c6600v 600vcoolmos?c6powertransistor ipx60r190c6 datasheet rev.2.2 final powermanagement&multimarket
drain pin 2 gate pin 1 source pin 3 600v coolmos " c6 power transistor IPA60R190C6, ipb60r190c6 ipi60r190c6, ipp60r190c6 ipw60r190c6 final data sheet 2 rev. 2.2, 2014-12-02 1 description coolmos " is a revolutionary technology for high voltage power mosfets, designed according to the superjunction (sj) prin ciple and pioneered by infineon technologies. coolmos " c6 series combines the experience of the leading sj mosfet supplier wi th high class innovation. the offered devices provide all bene fits of a fast switching sj mosfet while not sacrificing ease of use. extremely low switching and conduction losses make switchi ng applications even more efficient, more compact, lighter, a nd cooler. features extremely low losses due to very low fom r dson *q g and e oss very high commutation ruggedness easy to use/drive jedec 1) qualified, pb-free plating, halogen free applications pfc stages, hard switching pwm stages and resonant switching pwm stages for e.g. pc silverbox, adapter, lcd & pdp tv, lighting, server, telecom and ups. please note: for mosfet paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended. 1) j-std20 and jesd22 table 1 key performance parameters parameter value unit v ds @ t j,max 650 v r ds(on),max 0.19 ! q g,typ 63 nc i d,pulse 59 a e oss @ 400v 5.2 j body diode d i /d t 500 a/s type / ordering code package marking related links ipw60r190c6 pg-to247 ifx c6 product brief ipb60r190c6 pg-to263 ifx c6 portfolio ipi60r190c6 pg-to262 6r190c6 ifx coolmos webpage ipp60r190c6 pg-to220 ifx design tools IPA60R190C6 pg-to220 fullpak
600v coolmos " c6 power transistor ipx60r190c6 table of contents final data sheet 3 rev. 2.2, 2014-12-02 1 description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 5 electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 6 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 7 package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 8 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 table of contents
600v coolmos tm c6 power transistor ipx60r190c6 maximum ratings 2 maximum ratings at t j = 25 c, unless otherwise specified. table 2 maximum ratings parameter symbol values unit note / test condition min. typ. max. continuous drain current 1) i d - - 20.2 a t c = 25 c 12.8 t c = 100c pulsed drain current 2) i d,pulse - - 59 a t c =25 c avalanche energy, single pulse e as - - 418 mj i d =3.4 a, v dd =50 v (see table 21) avalanche energy, repetitive e ar - - 0.63 i d =3.4 a, v dd =50 v avalanche current, repetitive i ar - - 3.4 a mosfet dv/dt ruggedness dv/dt - - 50 v/ns v ds =0...480 v gate source voltage v gs - 20 - 20 v static - 30 30 ac (f>1 hz) power dissipation for to-220, to-247, to-262, to-263 p tot - - 151 w t c =25 c power dissipation for to-220 fullpak p tot - - 34 operating and storage temperature t j , t stg - 55 - 150 c mounting torque to-220, to-247 - - 60 ncm m3 and m3.5 screws mounting torque to-220 fullpak 50 m2.5 screws continuous diode forward current i s - - 17.5 a t c =25 c diode pulse current 2) i s,pulse - - 59 a t c =25 c reverse diode dv/dt 3) dv/dt - - 15 v/ns v ds =0...400 v, i sd & i d , t j =25 c (see table 22) maximum diode commutation speed 3) di f /dt - - 500 a/s insulation withstand voltage to-220 fullpak v iso - - 2500 v v rms , t c =25 c , t = 1 min 1) limited by t j,max. maximum duty cycle d=0.75 2) pulse width t p limited by t j,max 3) identical low side and high side switch with identical r g final data sheet 4 rev. 2.2, 2014-12-02
600v coolmos " c6 power transistor ipx60r190c6 thermal characteristics final data sheet 5 rev. 2.2, 2014-12-02 3 thermal characteristics table 3 thermal characteristics to-220 (ipp60r190c6),to- 247 (ipw60r190c6),to-262 (ipi60r190c6) parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - - 0.83 c/w thermal resistance, junction - ambient r thja - - 62 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s table 4 thermal characteristics to-220 fullpak (ipa60r190 c6) parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - - 3.7 c/w thermal resistance, junction - ambient r thja - - 80 leaded soldering temperature, wavesoldering only allowed at leads t sold - - 260 c 1.6 mm (0.063 in.) from case for 10 s table 5 thermal characteristics to-263 (ipb60r190c6) parameter symbol values unit note / test condition min. typ. max. thermal resistance, junction - case r thjc - - 0.83 c/w thermal resistance, junction - ambient r thja - - 62 smd version, device on pcb, minimal footprint 35 smd version, device on pcb, 6cm 2 cooling area 1) 1) device on 40mm*40mm*1.5mm one layer epoxy pcb fr4 with 6cm 2 copper area (thickness 70m) for drain connection. pcb is vertical without air stream cooling. soldering temperature, wave- & reflow soldering allowed t sold - - 260 c reflow msl1
600v coolmos " c6 power transistor ipx60r190c6 electrical characteristics final data sheet 6 rev. 2.2, 2014-12-02 4 electrical characteristics electrical characteristics, at t j=25 c, unless otherwise specified. table 6 static characteristics parameter symbol values unit note / test condition min. typ. max. drain-source breakdown voltage v (br)dss 600 - - v v gs =0 v, i d =0.25 ma gate threshold voltage v gs(th) 2.5 3 3.5 v ds = v gs , i d =0.63ma zero gate voltage drain current i dss - - 1 a v ds =600 v, v gs =0 v, t j =25 c - 10 - v ds =600 v, v gs =0 v, t j =150 c gate-source leakage current i gss - - 100 na v gs =20 v, v ds =0 v drain-source on-state resistance r ds(on) - 0.17 0.19 ! v gs =10 v, i d =9.5 a, t j =25 c - 0.44 - v gs =10 v, i d =9.5 a, t j =150 c gate resistance r g - 8.5 - ! f =1 mhz, open drain table 7 dynamic characteristics parameter symbol values unit note / test condition min. typ. max. input capacitance c iss - 1400 - pf v gs =0 v, v ds =100 v, f =1 mhz output capacitance c oss - 85 - effective output capacitance, energy related 1) 1) c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss c o(er) - 56 - v gs =0 v, v ds =0...480 v effective output capacitance, time related 2) 2) c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v (br)dss c o(tr) - 266 - i d =constant, v gs =0 v v ds =0...480v turn-on delay time t d(on) - 15 - ns v dd =400 v, v gs =13 v, i d =9.5a, r g = 3.4 ! (see table 20) rise time t r - 11 - turn-off delay time t d(off) - 110 - fall time t f - 9 -
600v coolmos " c6 power transistor ipx60r190c6 electrical characteristics final data sheet 7 rev. 2.2, 2014-12-02 table 8 gate charge characteristics parameter symbol values unit note / test condition min. typ. max. gate to source charge q gs - 7.6 - nc v dd =480 v, i d =9.5a, v gs =0 to 10 v gate to drain charge q gd - 32 - gate charge total q g - 63 - gate plateau voltage v plateau - 5.4 - v table 9 reverse diode characteristics parameter symbol values unit note / test condition min. typ. max. diode forward voltage v sd - 0.9 - v v gs =0 v, i f =9.5a, t j =25 c reverse recovery time t rr - 430 - ns v r =400 v, i f =9.5a, d i f /d t =100 a/s (see table 22) reverse recovery charge q rr - 6.9 - c peak reverse recovery current i rrm - 30 - a
600v coolmos " c6 power transistor ipx60r190c6 electrical characteristics diagrams final data sheet 8 rev. 2.2, 2014-12-02 5 electrical characteristics diagrams table 10 power dissipation to-220, to-247, to-262, to-263 power dissipation to-220 fullpak p tot = f( t c ) p tot = f( t c ) table 11 max. transient thermal impedance to-220, to-247, to-262, to-263 max. transient thermal impedance to-220 fullpak z (thjc) =f(tp); parameter: d=t p /t z (thjc) =f(tp); parameter: d=t p /t
600v coolmos " c6 power transistor ipx60r190c6 electrical characteristics diagrams final data sheet 9 rev. 2.2, 2014-12-02 table 12 safe operating area t c =25 c to-220, to-247, to-262, to-263 safe operating area t c =25 c to-220 fullpak i d =f(v ds ); t c =25 c; d=0; parameter t p i d =f(v ds ); t c =25 c; d=0; parameter t p table 13 safe operating area t c =80 c to-220, to-247, to-262, to-263 safe operating area t c =80 c to-220 fullpak i d =f(v ds ); t c =80 c; d=0; parameter t p i d =f(v ds ); t c =80 c; d=0; parameter t p
600v coolmos " c6 power transistor ipx60r190c6 electrical characteristics diagrams final data sheet 10 rev. 2.2, 2014-12-02 table 14 typ. output characteristics t c =25 c typ. output characteristics t j =125 c i d =f( v ds ); t j =25 c; parameter: v gs i d =f( v ds ); t j =125 c; parameter: v gs table 15 typ. drain-source on-state resistance drain-source on-st ate resistance r ds(on) =f( i d ); t j =125 c; parameter: v gs r ds(on) =f( t j ); i d =9.5 a; v gs =10 v
600v coolmos " c6 power transistor ipx60r190c6 electrical characteristics diagrams final data sheet 11 rev. 2.2, 2014-12-02 table 16 typ. transfer characteristics typ. gate charge i d =f( v gs ); v ds =20v v gs =f( q gate ), i d =9.5a pulsed table 17 avalanche energy drain-source breakdown voltage e as =f( t j ); i d =3.4 a; v dd =50 v v br(dss) =f( t j ); i d =0.25 ma
600v coolmos " c6 power transistor ipx60r190c6 electrical characteristics diagrams final data sheet 12 rev. 2.2, 2014-12-02 table 18 typ. capacitances typ. c oss stored energy c=f( v ds ); v gs =0 v; f =1 mhz e oss =f( v ds ) table 19 forward characteristics of reverse diode i f =f( v sd ); parameter: t j
600v coolmos " c6 power transistor ipx60r190c6 test circuits final data sheet 13 rev. 2.2, 2014-12-02 6 test circuits table 20 switching times test circuit and waveform for induc tive load switching times test circuit for inductive load switching t ime waveform table 21 unclamped inductive load test circuit and waveform unclamped inductive load test circuit unclamped inductive waveform table 22 test circuit and waveform for diode characteristic s test circuit for diode characteristics diode recovery wave form v ds v gs v ds v gs t d(on) t d(off) t r t on t f t off 10% 90% v ds i d v ds v d v (br)ds i d v ds v ds i d r g1 r g2 r g1 = r g2 ) / # $ #/ $ 00 %$! '$! --, --, $ --, .*+$$$&& ! ) # ) ! . --, " . $ $ ) #/ # / 00 $ 00 $ $ . $ ) ( " ( 00 ! ! . ) " !
600v coolmos " c6 power transistor ipx60r190c6 package outlines final data sheet 14 rev. 2.2, 2014-12-02 7 package outlines figure 1 outlines to-247, dimensions in mm/inches
600v coolmos " c6 power transistor ipx60r190c6 package outlines final data sheet 15 rev. 2.2, 2014-12-02 figure 2 outlines to-220, dimensions in mm/inches
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)$$4 +aa>./2h +) 0af8b 3b5@c<@8c *02-1 )-3- ,/..3 %' +.4# &#%! &$"$&"$( ,<9eb8 ( /ed><@8c 3/"&)'! 7 19 600vcoolmos?c6powertransistor ipx60r190c6 rev.2.2,2015-02-09 revisionhistory ipx60r190c6 revision:2015-02-09,rev.2.2 previous revision revision date subjects (major changes since last revision) 2.0 2011-06-08 release of final data sheet 2.1 2011-09-14 - 2.2 2015-02-09 pg-to220 fullpak package outline update (creation:2014-12-02) welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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